Lecture: New materials development at the SOLEIL Synchrotron: An International Collaboration by 
Amina Taleb and Edward Conrad 

WHENOctober 30, 2014 from 6:00 p.m. to 7:30 p.m.
WHERE: Georgia Institute of Technology, Clough Undergraduate Learning Commons, Auditorium 152
In this lecture, Georgia Tech Physics Professor Ed Conrad and Director of Research at the French National Center for Scientific Research (CNRS) Amina Taleb will give a feel for how modern research is conducted in the era of small materials and big machines, showing an example of an international materials research collaboration between Georgia Tech’s School of Physics and MRSEC faculty and researchers at the Synchrotron SOLEIL near Paris. 

Congratulations Professor Dennis Hess

Congratulations to Professor Dennis Hess, Director of MRSEC and a Chemical and Biomolecular Engineering Professor and Thomas C. DeLoach, Jr. Chair, for receiving the Henry B. Linford Award for Distinguished Teaching from The Electrochemical Society which will be formally awarded to Dr. Hess in May, 2014 at the ECS Spring Meeting. 


Growing high-quality Graphene

"For growing high-quality graphene on silicon carbide, controlling the evaporation of silicon at just the right temperature is essential," said Walt de Heer, a professor who pioneered the technique in the Georgia Tech School of Physics. "By precisely controlling the rate at which silicon comes off the wafer, we can control the rate at which graphene is produced. That allows us to produce very nice layers of epitaxial graphene."

Congratulations Dr. Claire Berger

Congratulations to Dr. Claire Berger for being named a Fellow of the American Physical Society for "seminal contributions to the development of epitaxial graphene electronic". APS Fellowship is a recognition by their peers of their exceptional contributions to physics. This is a distinct honor as the number of Fellows of the APS is limited to no more than one half of one percent of the membership.


Recent Graphene News

  • Ballistic Transport in Graphene Nanoribbons Ballistic Transport in Graphene Suggests New Type of Electronic Device

    Using electrons more like photons could provide the foundation for a new type of electronic device that would capitalize on the ability of graphene to carry electrons with almost no resistance even at room temperature – a property known as ballistic transport.

  • Figure 1 Chemically Engineered Graphene-Based 2D Organic Molecular Magnet

    Carbon-based magnetic materials and structures of mesoscopic dimensions may offer unique opportunities for future nanomagnetoelectronic/spintronic devices. To achieve their potential, carbon nanosystems must have controllable magnetic properties. We demonstrate that nitrophenyl functionalized graphene can act as a room-temperature 2D magnet. We report a comprehensive study of low-temperature magnetotransport, vibrating sample magnetometry (VSM), and superconducting quantum interference (SQUID) measurements before and after radical functionalization.

  • A. Surface characterization: ARPES and STM Exceptional ballistic transport in epitaxial graphene nanoribbons

    Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers.

  • Wafer bonding solution to epitaxial graphene – silicon integration Figure 1 Wafer bonding solution to epitaxial graphene – silicon integration

    The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene.

  • Probing terahertz surface plasmon waves in graphene structures Probing terahertz surface plasmon waves in graphene structures

    Epitaxial graphene mesas and ribbons are investigated using terahertz (THz) nearfield microscopy to probe surface plasmon excitation and THz transmission properties on the sub-wavelength scale. The THz near-field images show variation of graphene properties on a scale smaller than the wavelength, and excitation of THz surface waves occurring at graphene edges, similar to that observed at metallic edges.

  • Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks Local tuning of graphene thickness on 4H-SiC C-face using decomposing silicon nitride masks

    Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride mask prior to graphitization.

  • Highly efficient spin transport in epitaxial graphene on SiC Highly efficient spin transport in epitaxial graphene on SiC

    Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide.

  • A method to extract pure Raman spectrum of epitaxial graphene on SiC A method to extract pure Raman spectrum of epitaxial graphene on SiC

    A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity and poorly resolved spectra resulting from a simple subtraction of a SiC background from the experimental data. We also show that the method is similar to deconvolution, for spectra composed of multiple sub- micrometer areas, with the advantage that no prior information on the impulse response functions is needed. We have used this property to characterize the Raman laser beam. The method capability in efficient data smoothing is also demonstrated

More News >

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

figure2 The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation.

Professor Walt de Heer awarded the 2012 Jesse W. Beams Research Award

Professor Walter de Heer has been awarded the 2012 Jesse W. Beams Research Award by the Southeastern Section of the American Physical Society.

The Beams Award honors those whose research led to the discovery of new phenomena or states of matter, provided fundamental insights in physics, or involved the development of experimental or theoretical techniques that enabled others to make key advances in physics with critical acclaim of peers nationally and internationally.



Prof Walt de Heer awarded 1st Felcht Award

Professor Walter de Heer has been honored as the 1st Utz-Hellmuth Felcht Award winner at the International Carbon Conference in Shanghai where he was recognized for his invention of graphene based electronics and for his merits in the area of graphene research and his revolutionary concept of graphene based nanoelectronics.

Graphene - She goes fast, she goes fast, she goes fast

Click on the graphic to hear the musical version of Graphene conceived and recorded for Inside the Black Box

Click to Play

Technique Produces Graphene Nanoribbons with Metallic Properties

Researchers have made graphene nanoribbons with metallic properties.

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Epitaxial Graphene Home

The Georgia Tech Materials Science and Engineering Center (MRSEC), funded  by the National Science Foundation (NSF), is located in the Georgia Tech Marcus Nanotechnology Building. The  initial focus of the center is research and development on epitaxial  graphene (EG), a material with extraordinary electronic properties that  offers the possibility of greatly enhanced speed and performance  relative to silicon; this material may serve as the successor to silicon  in integrated circuits and microelectronic devices. Georgia Tech Physics  Professors Walt de Heer, Ed Conrad, and Phil First are world leaders  in the growth and characterization of EG.

Research Mission

The Georgia Tech MRSEC will develop the fundamental science and technology to maximize graphene’s potential for future electronics technology, will establish core curricula in Epitaxial Graphene (EG), and will educate and train a diverse workforce for future academic and industrial leadership in microelectronics.  The MRSEC EG effort is cross-disciplinary within Georgia Tech and within three other U.S. universities:  University of California-Berkeley, University of California-Riverside, and University of Michigan.  Professor Dennis Hess (ChBE) serves as the Georgia Tech MRSEC Director, and Professor Walt de Heer (Physics) heads the EG Interdisciplinary Research Group.

Graphene Video Highlights

Graphene Takes Worldwide Spotlight