
"For growing high-quality graphene on silicon carbide, controlling the evaporation of silicon at just the right temperature is essential," said Walt de Heer, a professor who pioneered the technique in the Georgia Tech School of Physics. "By precisely controlling the rate at which silicon comes off the wafer, we can control the rate at which graphene is produced. That allows us to produce very nice layers of epitaxial graphene."
The first MRSEC Seminar of the Spring 2012 semester will be held on Thursday, January 26, 2012 at 3pm in the Microelectronics Research Center, Room 102 located on the first floor of the building. We are pleased to welcome Dr. Mark Hersam, Northwestern University as our speaker. Read More >>
Defect in Graphene May Present Bouquet of Possibilities NIST Tech Beat, May 24, 2011
Graphene Nanoribbons Display Metallic Properties Electronic Design, May 20, 2011
Miracle Material
National Science Foundation, Where Discoveries Begin, May 2011
High-resolution tunnelling spectroscopy of a graphene quartet
Nature Nanotechnology News 09/09/2010